Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method - Semiconductor growth - Document - PDFSEARCH.IO

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	Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method Add to Reading List Document Date: 2008-01-26 11:30:52 Open Document File Size: 305,60 KB Share Result on Facebook City San Diego / / Company RASIRC Inc. / / / IndustryTerm optical devices / chemical / dry oxidation process using oxygen gas / chemical reaction / / Person J. Salzman / / / ProvinceOrState California / / URL www.rasirc.com / / SocialTag Silicon Thermal oxidation Ceramic materials Oxygen Solar cells Deal–Grove model Oxide Silicon dioxide Ultra-high-purity steam for oxidation and annealing Chemistry

Improved Oxide Growth Rate and Uniformity through New Steam Delivery MethodAdd to Reading List