Journal of Crystal Growth–313 Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals}numerical model and qualitative considerations a - Semiconductor growth - Document - PDFSEARCH.IO

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	Journal of Crystal Growth–313 Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals}numerical model and qualitative considerations a Add to Reading List Document Date: 2003-02-27 08:19:22 Open Document File Size: 50,00 KB Share Result on Facebook City Hanover / Riga / / Company Wacker Siltronic AG / Elsevier Science B.V. / ANSYS / / Country Germany / Latvia / / / Facility University of Latvia / University of Hanover / / / Organization University of Hanover / Institute for Electroheat / Department of Physics / University of Latvia / / Person Crystal Growth / / / Position intensive multiplication *Corresponding author / / Technology radiation / simulation / / SocialTag Crystals Semiconductor growth Crystallographic defects Crystallography Dislocation Crystal growth Silicon Czochralski process Crystal Chemistry

Journal of Crystal Growth–313 Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals}numerical model and qualitative considerations aAdd to Reading List