Journal of Crystal Growth–117 Numerical investigation of the inﬂuence of EM-ﬁelds on ﬂuid motion and resistivity distribution during ﬂoating-zone growth of large silicon single crystals a - Semiconductor growth - Document - PDFSEARCH.IO

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	Journal of Crystal Growth–117 Numerical investigation of the inﬂuence of EM-ﬁelds on ﬂuid motion and resistivity distribution during ﬂoating-zone growth of large silicon single crystals a Add to Reading List Document Date: 2003-02-27 08:19:21 Open Document File Size: 49,49 KB Share Result on Facebook City Hanover / Riga / / Company Elsevier Science B.V. / / Country Germany / / / Facility University of Hannover / University of Latvia / University of Hanover / / / IndustryTerm gas doping / / Organization University of Hanover / University of Hannover / Institute for Electroheat / Department of Physics / University of Latvia / / Person Crystal Growth / / / Position *Corresponding author / / Technology semiconductor / simulation / / SocialTag Semiconductor device fabrication Materials science Condensed matter physics Electrical resistivity and conductivity Dopant Doping Silicon Crystal Chemistry Physics

Journal of Crystal Growth–117 Numerical investigation of the inﬂuence of EM-ﬁelds on ﬂuid motion and resistivity distribution during ﬂoating-zone growth of large silicon single crystals aAdd to Reading List