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China Semiconductor Technology International Conference (ISTC/CSTICShanghai, March, China SUBMITTED PAPER Analysis of Transient Effects in CZ and FZ Bulk Crystal Growth using Quasi-Dynamic Numerical Sim
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Document Date: 2013-10-16 09:13:50

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File Size: 80,44 KB

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City

Shanghai / /

Company

F. Dupret1 / FEMAGSoft S.A. Company / /

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IndustryTerm

on-line settings / /

Organization

Belgium CESAME Research Center / /

Person

Georges Lemaître / /

Position

Corresponding author / /

Technology

Process Control / av / simulation / /

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