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Condensed matter physics / Diode / Schottky diode / Semiconductor device fabrication / Schottky barrier / Gallium nitride / Depletion region / Ohmic contact / Diode modelling / Chemistry / Diodes / Electronic engineering


Fabrication and characteristics of Hg/n-bulk GaN schottky diode. LEonardo Journal of Sciences 2015;26:.
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Document Date: 2015-04-16 15:03:48

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File Size: 104,87 KB

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City

Setif / Sidi Bel Abbes / New York / Oxford / /

Company

Solid-State Electronics / HP / Ge / Hg GaN Ag / John Wiley & Sons / /

Country

Algeria / /

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Facility

Farhet Abbas University / University Djillali Liabès / University Press / Laboratory of Applied Microelectronics / /

IndustryTerm

metal / metal semiconductor interface / conduction band energy / e-qV / semiconductor devices / energy density / high frequency power electronics / energy / /

Organization

Farhet Abbas University / Department of Phyisics / SS ( V ) / Laboratory of Applied Microelectronics / /

Person

Bel Abbes / Pratap Reddy / /

/

Product

GaN / /

ProgrammingLanguage

DC / /

ProvinceOrState

New York / /

Technology

semiconductor / semiconductors / lasers / semiconductor devices / Dielectric / optoelectronics / /

URL

http /

SocialTag