Application Note AN-983

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Date: 2012-09-10 17:45:32 Electronics Insulated gate bipolar transistor Power semiconductor device Power MOSFET Transistor Safe operating area MOSFET Thyristor Field-effect transistor Power electronics Electromagnetism Electrical engineering		Application Note AN-983 Add to Reading List Source URL: www.irf.com Download Document from Source Website File Size: 1,10 MB Share Document on Facebook

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