First Page | Document Content | |
---|---|---|
![]() Date: 2003-10-16 16:43:16MOSFET Semiconductor devices Field-effect transistor Threshold voltage Short-channel effect Transistor Power electronics Charge carriers Carbon nanotubes Electrical engineering Electromagnetism Electronic engineering | Source URL: www-tcad.stanford.eduDownload Document from Source WebsiteFile Size: 205,44 KBShare Document on Facebook |
![]() | SAMWIN SW50N10 N-channel TO-220 MOSFET FeaturesDocID: 1rjYK - View Document |
![]() | APPLIED PHYSICS LETTERS 89, 143502 共2006兲 Pressure sensing by flexible, organic, field effect transistors I. Manunza, A. Sulis, and A. Bonfiglioa兲 CNISM; Department of Electric and Electronic Engineering, UniversiDocID: 1rjv8 - View Document |
![]() | Electrically erasable non-volatile semiconductor memoryDocID: 1riBj - View Document |
![]() | APPLIED PHYSICS LETTERS 88, 023506 共2006兲 Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors P. Cosseddu and A. Bonfiglio INFM-University of Cagliari, Department of EDocID: 1r7eH - View Document |