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Thin film deposition / Superhard materials / Ceramic materials / Gallium nitride / Passivation / Metalorganic vapour phase epitaxy / Transistor / Silicon nitride / Chemical vapor deposition / Chemistry / Semiconductor device fabrication / Nitrides


90 Technology focus: GaN HEMTs Reducing gate leakage and current collapse in GaN HEMTs on silicon UK research team combines sulfuric acid treatment and silicon nitride
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Document Date: 2015-04-08 17:14:49


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Country

United Kingdom / /

Facility

University of Sheffield / University of Cambridge / /

IndustryTerm

metal / gate metal / post-gate metal passivation / chemical vapor deposition / pre-gate metal treatment / hydrogen peroxide solution / gate metal deposition / chemical / chemical treatments / electronics applications / post-gate metal treatment / /

Organization

University of Sheffield / University of Cambridge / /

Person

Mike Cooke / /

Technology

semiconductor / 90 Technology / chemical vapor deposition / /

URL

www.semiconductor-today.com / http /

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