APPLIED PHYSICS LETTERS VOLUME 83, NUMBER[removed]DECEMBER 2003

First Page		Document Content
Date: 2007-07-14 19:02:07 Optoelectronics Semiconductor devices Epitaxy Indium phosphide Laser diode Metalorganic vapour phase epitaxy Heterojunction Photoresist Indium gallium arsenide Chemistry Thin film deposition Semiconductor device fabrication		APPLIED PHYSICS LETTERS VOLUME 83, NUMBER[removed]DECEMBER 2003 Add to Reading List Source URL: daedalus.caltech.edu Download Document from Source Website File Size: 158,66 KB Share Document on Facebook

	Quantum Communications using Semiconductor Devices Andrew Shields Toshiba Research Europe Ltd 208 Science Park, Milton Road, Cambridge CB40GZ. UK www.quantum.toshiba.co.uk * DocID: 1vqum - View Document
	Dear Colleagues: Semiconductor Research Corporation (SRC) Global Research Collaboration (GRC) is soliciting White Papers in the thrust area of Logic and Memory Devices. The white paper, limited to two pages and addressin DocID: 1uNQx - View Document
	Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices DocID: 1tQeR - View Document
	E6: Optoelectronics Optoelectronics research area includes semiconductor based optoelectronic devices and materials as well DocID: 1sFF2 - View Document
	1 VI. Semiconductor Devices and Microelectronics 1. Bipolar Transistors Bipolar transistors in amplifiers 2. Field Effect Transistors DocID: 1sy2o - View Document