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Computer memory / Electronics / Static random-access memory / Non-volatile memory / Digital electronics / IC power supply pin / CMOS / Nonvolatile BIOS memory / Computer hardware / Electronic engineering / Integrated circuits


PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D
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Document Date: 2009-08-10 09:37:23

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File Size: 224,51 KB

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Company

SAMSUNG Electronics CO. LTD. / fabricated using SAMSUNG / /

IndustryTerm

speed circuit technology / density high-speed system applications / given device / /

MarketIndex

TA 40 / /

Organization

United Nations / International Criminal Court / Including Scope and Jig Capacitance READ CYCLE* K6R4016V1D-08 Parameter Symbol K6R4016V1D-10 Unit / /

Person

RAM FEATURES / DIN L DIN / DIN High-Z / /

Position

forward / General / /

Product

Koss CS 6 Headphone/Headset / /

ProgrammingLanguage

C * / DC / /

Technology

ns Chip / 10 ns Chip / high-speed circuit technology / Random Access / SRAM / 5 ns Read Cycle Time Chip / /

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