<--- Back to Details
First PageDocument Content
Electronic engineering / Dynamic random-access memory / Multigate device / Static random-access memory / Random-access memory / CMOS / Integrated circuit / MOSFET / Very-large-scale integration / Computer memory / Electronics / Computer hardware
Date: 2014-09-08 07:16:02
Electronic engineering
Dynamic random-access memory
Multigate device
Static random-access memory
Random-access memory
CMOS
Integrated circuit
MOSFET
Very-large-scale integration
Computer memory
Electronics
Computer hardware

Microsoft PowerPoint - Chap1.Slides_Sorteda.ppt

Add to Reading List

Source URL: media.wiley.com

Download Document from Source Website

File Size: 922,77 KB

Share Document on Facebook

Similar Documents

Electrical engineering / Electronic engineering / Electromagnetism / Digital electronics / Computer memory / Logic families / Static random-access memory / Electronic design / Subthreshold conduction / Memory cell / Transistor / Threshold voltage

Ultra-low power FinFET based SRAM cell employing sharing current concept

DocID: 1qOFd - View Document

Computer memory / Computing / Computer hardware / Electronic engineering / Floating-gate MOSFET / Non-volatile memory / Static random-access memory / Memory cell / Random-access memory / Self-aligned gate / CMOS / Reading

SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

DocID: 1qoQu - View Document

Computer memory / Computer hardware / Computing / Dynamic random-access memory / Memory controller / Static random-access memory / Synchronous dynamic random-access memory / Random-access memory / Video RAM / DIMM / Flash memory / SIMM

Chapter 6 The Memory Hierarchy To this point in our study of systems, we have relied on a simple model of a computer system as a CPU that executes instructions and a memory system that holds instructions and data for th

DocID: 1q6Me - View Document

NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully st

DocID: 1nv90 - View Document

Workshop Four - Framestore for an LED Array Introduction This experiment is designed to show the operation of a framestore and introduce the use of a Static Random Access Memory (SRAM). The design uses the SRAM as a fram

DocID: 1cZpn - View Document