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Optoelectronics / Semiconductor devices / Epitaxy / Indium phosphide / Laser diode / Metalorganic vapour phase epitaxy / Heterojunction / Photoresist / Indium gallium arsenide / Chemistry / Thin film deposition / Semiconductor device fabrication


APPLIED PHYSICS LETTERS VOLUME 83, NUMBER[removed]DECEMBER 2003
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Document Date: 2007-07-14 19:02:07

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City

Palaiseau / Golden / Pasadena / New York / /

Company

California 91125 S. P. / Ge / National Renewable Energy Laboratory / Y. J. Chabal S. P. / /

Country

France / /

Currency

pence / USD / /

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Event

Product Issues / /

Facility

American Institute of Physics Downloaded / National Renewable Energy Laboratory / Harry A. Atwater Thomas J. Watson Laboratory of Applied Physics / California Institute of Technology / American Institute of Physics / M. W. Wanlass National Renewable Energy Laboratory / /

IndustryTerm

optoelectronic devices / optical devices / high carrier mobilities / silicon electronics / telecommunications applications / infrared optoelectronic devices / electronics / chemical-mechanical polishing / /

Organization

California Institute of Technology / American Institute of Physics Downloaded / J. M. Zahler / and Harry A. Atwater Thomas J. Watson Laboratory of Applied Physics / American Institute of Physics / National Aeronautics and Space Administration / M. W. Wanlass National Renewable Energy Laboratory / Palestine Liberation Organization / /

Person

J. Eng / Jr. / Harry Atwater / /

Product

InP surface / /

ProvinceOrState

New York / Colorado / /

Technology

semiconductor / semiconductors / lasers / spectroscopy / optical fiber / chemical vapor deposition / /

URL

http /

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