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MOSFETs
Results: 57

#	Item
51	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki, and H. Koike Electroinformatics Group, Nanoelectronics Res Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2005-05-23 13:18:26 Electrical engineering Transistor Short-channel effect Field-effect transistor Multigate device Depletion region Power electronics Power MOSFET Semiconductors Technology MOSFET Electronic engineering
52	A Non-Charge-Sheet Analytic Theory for DG MOSFETs using SPP Approach Jin He, Xuemei Xi, Chung-Hsun Lin, Mansun Chan, Ali M. Niknejad, and Chenming Hu Department of EECS, University of California, Berkeley, CA 94720, USA Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:37:07 Physical quantities MOSFET Threshold voltage Electric potential Electric field Electromagnetism Physics Electrostatics
53	Compact modeling for Multiple-Gate SOI MOSFETs B. Iñiguez, H. A. Hamid, D. Jiménez and J. Roig* * Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:54:03 Electronic design MOSFET Threshold voltage Field-effect transistor CMOS Power electronics Power MOSFET Channel length modulation Electrical engineering Electronic engineering Electromagnetism
54	Improved Compact Model for Four-Terminal DG MOSFETs T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki, and H. Koike Electroinformatics Group, Nanoelectronics Research Institute National Institute of Advanced In Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2010-03-19 15:39:48 Symbol MOSFET Multigate device Threshold voltage
55	A Study of Figures of Merit for High Frequency Behavior of MOSFETs in RF IC Applications Yuhua Cheng Siliconlinx, Inc. Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-23 13:19:05 Electronic design Electromagnetism Logic families MOSFET CMOS Transistor IC power supply pin Integrated circuit design Electronic engineering Integrated circuits Electronics
56	Microsoft Word - AN-1155 Linear Mode Operation of Rad Hard MOSFETs new.doc Add to Reading List Source URL: www.irf.com Language: English - Date: 2009-10-14 18:48:18 Electromagnetism Power electronics MOSFET Safe operating area Biasing Threshold voltage Power semiconductor device Field-effect transistor Thermal runaway Electronic engineering Electrical engineering Electronics
57	IGBT or MOSFET: Choose Wisely by Carl Blake and Chris Bull, International Rectifier With the proliferation of choices between MOSFETs and IGBTs, it is becoming increasingly difficult for today’s Add to Reading List Source URL: www.irf.com Language: English - Date: 2000-10-18 18:04:50 Electronic engineering Insulated gate bipolar transistor Power semiconductor device MOSFET Transistor Field-effect transistor Switched-mode power supply Diode Power MOSFET Power electronics Electronics Electromagnetism

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