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MOSFETs
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#	Item
21	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Modeling Source/Drain Contact Resistance in Nanoscale MOSFETs E. Chen, Anson C-C Wang, H.S. Chen, W.H. Hsieh, T-H Yu, T.M. Shen, Jeff Wu, and C.H. Diaz TCAD Division, T Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English* - Date: 2013-02-12 08:39:10
22	SISPAD 2012, September 5-7, 2012, Denver, CO, USA A Unified Computational Scheme for 3D Statistical Simulation of Reliability Degradation of Nanoscale MOSFETs F. Adamu-Lema, S. Amoroso, S. Markov, L. Gerrer Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English - Date: 2013-02-12 08:39:05
23	SISPAD 2012, September 5-7, 2012, Denver, CO, USA 3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs N. Seoane, A. Garcia–Loureiro, E. Comesa˜na, R. V Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English - Date: 2013-02-12 08:39:09
24	80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-10-01 12:01:02
25	POLE-ZERO is a 4-pole (24dB/octave) low pass Voltage Controlled Filter (VCF) utilizing MOSFET transistors. MOSFETs are known for their soft, vacuum tube like distortion when overdriven. POLE-ZERO is designed to exploit t Add to Reading List Source URL: www.wmdevices.com Language: English
26	A Monte-Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs P. Palestri, D. Esseni, S. Eminente , C. Fiegna , E. Sangiorgi and L. Selmi DIEG, Univ. of Udine, Via delle Scienze 208, 33100 Udine, Italy, FA Add to Reading List Source URL: www.his.com Language: English
27	696 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 3, MARCH 2015 Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including Add to Reading List Source URL: yangtze.hku.hk Language: English - Date: 2015-04-21 18:39:08 Emerging technologies Nanomaterials MOSFET Silicon dioxide Amorphous silicon Electronic band structure Quantum dot Crystal Nanowire Chemistry Physics Materials science
28	DIO 4469 Why Diodes - MOSFET2_:05 Page 1 WHY DIODES – MOSFET2 Why DIODES? MOSFETs Add to Reading List Source URL: diodes.com Language: English - Date: 2014-10-30 07:48:49 Power electronics Electromagnetism MOSFET H bridge Diode Electronic engineering Electronics Logic families
29	IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 5, MAY[removed]Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2014-05-20 14:14:37 Technology Microtechnology Etching Microelectromechanical systems Reactive-ion etching Nanowire Indium gallium arsenide MOSFET Dry etching Semiconductor device fabrication Materials science Chemistry
30	178 IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, FEBRUARY 2014 A Test Structure to Characterize Nano-Scale Ohmic Contacts in III–V MOSFETs Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2014-04-22 16:07:00 Physics Electromagnetism Electrical engineering Contact resistance Ohmic contact MOSFET Indium gallium arsenide Electrical resistivity and conductivity Transistor Materials science Chemistry Physical quantities

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