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 Date: 2005-04-28 17:39:27Chemistry Gallium arsenide Optoelectronics Field-effect transistor Fet Electrical components ANADIGICS High-electron-mobility transistor |
| PDF DocumentDocID: 1qQPv - View Document |
| TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In thisDocID: 1qDin - View Document |
| Paper Title (use style: paper title)DocID: 1qzVz - View Document |
| Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMODDocID: 1qgif - View Document |
| Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui LiDocID: 1pAQt - View Document |