高頻功率氮化銦鋁氮化鎵高電子遷移率電晶體技術開發與研究 Development of InAlN GaN HEMT for High Power and High Frequency Applications 專題學生:王鈞 - High frequency - Document - PDFSEARCH.IO

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	高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體技術開發與研究 Development of InAlN/GaN HEMT for High Power and High Frequency Applications 專題學生:王鈞 Add to Reading List Document Date: 2015-03-31 23:23:11 Open Document File Size: 478,42 KB Share Result on Facebook Company PECVD Nitride Via Compound Semiconductor Device Laboratory / LG / Compound Semiconductor Device Laboratory / / MusicGroup High Frequency / High Power / / ProgrammingLanguage DC / / SocialTag Thin film deposition Gallium nitride Sapphire Aluminium nitride Plasma-enhanced chemical vapor deposition Semiconductor device Chemistry Nitrides Semiconductor device fabrication

高頻功率氮化銦鋁/氮化鎵高電子 遷移率電晶體技術開發與研究 Development of InAlN/GaN HEMT for High Power and High Frequency Applications 專題學生:王鈞Add to Reading List