1 AL GaN Technology Overview RI

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Date: 2014-06-24 07:16:10 Power electronics Semiconductor devices Gallium nitride Nitrides Field-effect transistor MOSFET Transistor Depletion and enhancement modes High electron mobility transistor Chemistry Technology Electrical engineering		1 AL GaN Technology Overview RI Add to Reading List Source URL: media.wiley.com Download Document from Source Website File Size: 1,03 MB Share Document on Facebook

	6 Publishable Summary OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project DocID: 1vs71 - View Document
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	Electronic Devices on Various Substrates: Fabrication of Releasable SingleCrystal SiliconMetal Oxide FieldEffect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater) DocID: 1rrrV - View Document