<--- Back to Details
First PageDocument Content
Semiconductor devices / Bipolar junction transistor / Transistor / Field-effect transistor / P–n junction / Biasing / Diode / Point-contact transistor / Zener diode / Electrical engineering / Electronic engineering / Electronics
Date: 2013-10-01 19:04:08
Semiconductor devices
Bipolar junction transistor
Transistor
Field-effect transistor
P–n junction
Biasing
Diode
Point-contact transistor
Zener diode
Electrical engineering
Electronic engineering
Electronics

Bipolar Junction Transistors Attributes: Minority carrier

Add to Reading List

Source URL: nanofab.caltech.edu

Download Document from Source Website

File Size: 4,15 MB

Share Document on Facebook

Similar Documents

TA1100 TA1600 The Hafler TA1100 & TA1600 (Trans*Amp) are two channel, two rack height, convection-cooled (No Fans), MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power amplifiers. Both amps are suitable for

DocID: 1vnVh - View Document

BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor

DocID: 1tasL - View Document

Electromagnetism / Electrical engineering / Electronic engineering / Power electronics / Electric power conversion / Semiconductor devices / Insulated-gate bipolar transistor / Analog circuits / Power MOSFET / Diode / MOSFET / Field-effect transistor

Modeling Controlled Switches and Diodes for Electro-Thermal Simulation

DocID: 1rraA - View Document

Electronics / Electromagnetism / Electrical engineering / Nanoelectronics / Nanowire / Electrical components / Stretchable electronics / Field-effect transistor / Transistor

Stretchable FieldEffectTransistor Array of Suspended SnO2 Nanowires

DocID: 1rr9s - View Document