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![]() Date: 2013-01-18 23:02:09Semiconductors MOSFET Transistor Silicon carbide Field-effect transistor Electron mobility Chemistry Materials science Manufacturing | Add to Reading List |
![]() | Veena Misra Professor of Electrical and Computer Engineering North Carolina State University Optimizing Performance and Reliability of GaN MOSFET Devices Owing to a high critical electric field and high electron mobilityDocID: 1ukgt - View Document |
![]() | Letter pubs.acs.org/JPCL Cite This: J. Phys. Chem. Lett. 2017, 8, High Hole-Mobility Molecular Layer Made from Strong ElectronDocID: 1tW0B - View Document |
![]() | InAs-core Composite Channel Metal Oxide Semiconductor-High Electron Mobility Transistors : Fabrication and Characterization Wei-Hsiang Yu (尤韋翔)DocID: 1ssNK - View Document |
![]() | VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004DocID: 1r0Oe - View Document |
![]() | PDF DocumentDocID: 1qQPv - View Document |