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Electronic engineering / Back end of line / Chemical vapor deposition / Integrated circuit / Titanium nitride / Capacitor / Electromigration / Low-k dielectric / Semiconductor device fabrication / Technology / Chemistry


Document Date: 2010-08-11 20:37:36

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City

Newport / /

Company

TiN-AlCu-TiN Metal / GaAsMANTECH Inc. / /

Country

United Kingdom / /

Currency

AMD / /

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IndustryTerm

average metal line length / 130nm technology node parameters / metal / past technology developments / pre-metal dielectric / higher metal sheet resistance / compound semiconductor interconnect technologies / metal levels increases / silicon interconnect technology / logic devices / interconnect technologies / metal line patterns / interconnect technology / subtractive metal etch patterning / higher metal levels / metal pitches / tighter metal pitches / technology parameters / interconnect technology innovations / chemical / technology node / multi-level metal processing / lower metal levels / metal layers / technology milestones / metal lines / chemical interaction / /

Organization

IMD / /

Person

Keith Buchanan / Ion Etch / Mark Bohr / /

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Position

Driver / /

Product

Cu / /

Technology

semiconductor / 10 5 0 0.65 0.5 0.35 0.25 0.18 0.13 Technology / drivers Technology / compound semiconductor interconnect technologies / DRAM technologies / CMP technology / dielectric / lithography / Random Access / Keith Buchanan Trikon Technologies / CVD / planarisation / CMP / integrated circuit / silicon interconnect technology / /

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