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Arsenide
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31	PUBLICATION LIST 1) "Influence of a Two-Dimensional Electron System on the Propagation of Surface Acoustic Waves" A. Wixforth, J.P. Kotthaus, and G. Weimann, in the Proceedings of the 1st International Add to Reading List Source URL: www.physik.uni-augsburg.de Language: English - Date: 2015-11-04 03:40:14 Condensed matter physics Spintronics Superlattice Indium arsenide
32	Hot Electron Resistance and Magnetoresistance in High Purity Gallium Arsenide by Eric Sven Hellman A DISSERTATION Add to Reading List Source URL: hellman.net Language: English - Date: 2009-03-04 21:10:37
33	Supplementary information Growth and optical properties of axial hybrid III-V/Si nanowires Moïra Hocevar1, George Immink2, Marcel Verheijen2,3, Nika Akopian1, Val Zwiller1, Leo Kouwenhoven1 and Erik Bakkers1,3, * 1 Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Language: English - Date: 2013-10-31 05:07:28 Nanoelectronics Chemistry Electronics Mesoscopic physics Nanowire Condensed matter physics Nanomaterials Erik Bakkers Gallium arsenide Vaporliquidsolid method
34	Technology focus: 2D materials 71 Creating heterojunctions between black phosphorous and gallium arsenide Photo-response of phosphorene on GaAs is found to be comparable to that of Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-09-01 10:46:28
35	WHITEPAPER: Mobile Power Applications WHITEPAPER Mobile Power Applications Add to Reading List Source URL: www.altadevices.com Language: English - Date: 2015-07-27 21:39:47 Energy Physical universe Nature Photovoltaics Energy conversion Solar cells Energy harvesting Physical chemistry Solar vehicle Gallium arsenide Thin-film solar cell Photovoltaic system
36	ARTICLE Received 19 Jun 2012 \| Accepted 9 Nov 2012 \| Published 11 Dec 2012 DOI: ncomms2277 Growth and optical properties of axial Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Language: English - Date: 2012-12-20 07:57:34 Chemistry Nanoelectronics Electronics Nanotechnology Mesoscopic physics Nanomaterials Nanowire Emerging technologies Gallium arsenide Silicon nanowire Quantum dot Superlattice
37	80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-10-01 12:01:02
38	New Multijunction Design Leads to Ultra-Efficient Solar Cell Four-junction III-V multijunction cell uses buffer layers and other innovations to reach 45.6% efficiency at 690 suns NREL scientists have shown that four-junc Add to Reading List Source URL: www.nrel.gov Language: English - Date: 2015-09-01 17:25:25 Solar cells Energy conversion Semiconductor devices Multi-junction solar cell Gallium arsenide Indium gallium arsenide Photovoltaics National Renewable Energy Laboratory Quantum dot solar cell
39	GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization Add to Reading List Source URL: www.macom.com Language: English - Date: 2014-05-12 09:10:47 Semiconductor devices Solar cells Gallium nitride Nitrides IQE Gallium arsenide ANADIGICS Light-emitting diode Silicon carbide Chemistry Compound semiconductors Inorganic compounds
40	DenV S080159_MMIC Technology.qxd Add to Reading List Source URL: www.tno.nl Language: English - Date: 2015-06-18 10:40:50 Telecommunications engineering Monolithic microwave integrated circuit Phased array High electron mobility transistor Gallium arsenide Integrated circuit Active Electronically Scanned Array X band Microwave Technology Electronics Radar

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