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Annealing / Order and disorder / Zinc selenide / Chemistry / Crystallography / Zinc compounds


Journal of Crystal Growth 237––1569 Defects-induced volume deviations in ZnSe H. Ebea,*, F. Sakuraia,b, Z.Q. Chend, A. Uedonod, B.-P. Zhange, Y. Segawae, K. Sutoa,b,c, Jun-ichi Nishizawaa,b a
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Document Date: 2003-02-11 04:15:40


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City

Introduction ZnSe / Sendai / /

Company

Fujitsu Laboratories Ltd. / Elsevier Science B.V. / Ge / /

Country

Japan / /

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Facility

University of Tsukuba / Institute of Applied Physics / Semiconductor Research Institute of Semiconductor Research / Tohoku University / /

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IndustryTerm

argon gas pressures / energy gap / ambience peak energy shifts / peak energy shifts / energy spectra / energy / /

Organization

Semiconductor Research Institute of Semiconductor Research / Sendai Research Center / Graduate School / University of Tsukuba / Telecommunications Advancement Organization of Japan / Institute of Applied Physics / Department of Materials Science and Engineering / Kawauchi Aoba-ku / Tohoku University / /

Person

K. Ohkawa / V / J. Han / J. Nurnberger / V / J. Crystal Growth / Crystal Growth / /

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Position

*Corresponding author / /

Technology

radiation / laser / sublimation / X-ray / lasers / /

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