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Spectroscopy / Molecular physics / Surface chemistry / Atomic physics / Emission spectroscopy / Photoemission spectroscopy / X-ray photoelectron spectroscopy / X-ray / Ultraviolet photoelectron spectroscopy / Chemistry / Science / Physics


Photon Factory Activity Report 2002 #20 Part BSurface and Interface 2C/2002S2002 Chemistry and Band Offsets of HfO2 Thin Films for ULSI Gate Insulators
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Document Date: 2010-01-05 10:27:35


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City

Tokyo / /

Company

HfO2 Thin Films / /

Country

Japan / /

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

metal / energy loss spectra / insufficient energy resolution / metal oxides / energy dispersive x-ray / similar chemical shift features / chemical states / /

MusicGroup

Surface / Interface / Si / HfO2 / Hf1 / Chemistry / /

Organization

University of Tokyo / Semiconductor Technology Academic Research Center / High-Energy Accelerator Organization / Department of Applied Chemistry / /

Technology

spectroscopy / radiation / 3 Semiconductor Technology / X-ray / dielectric / /

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