AES / Au Ag / Ge / G.V. Hansson S.A. / J.E. Stalnaker S.A. / S. Narayanan S.A. / R.E. Clausing L.C. / Thin Solid Films / /
Country
United States / / /
Facility
National Institute of Standards and Technology / George Pharr The University of Tennessee / J. Camp / /
IndustryTerm
trap chip / gas load / cleaned trap chip / quantum information processing / metal electrode / metal traps / long chain / energy / in situ tools / metal / dry nitrogen gas / process gas / bare metal surfaces / stainless steel / trapped-ion quantum information processing / vacuum processing / inherent well-determined energy-level structure / residual contaminant background gas partial pressure / cryogenic systems / vacuum electronic devices / /
MusicGroup
B.C. / /
Organization
University of Tennessee / National Institute of Standards and Technology / Materials Research Society / American Physical Society / /
Person
B.R. Patla / D. Leibfried / Jim Phillips / C. Monroe Phys / N. Shiga / R. Ozeri / D.M. Meekhof / R. Jördens / Nat / D.T.C. Allcock / D. Kielpinski / J.H. Wesenberg / W.M. Itano / Mark Gesley / Ignacio Cirac / D.N. Stacey / A.H. Burrell / A.C. Wilson / D. Engelke / V / D.P. Pappas Trapped / R. Blatt / G. Leuchs / C. Monroe / I. Chuang / V / D.J. Wineland / Jim Bergquist / Y. Colombe / George Pharr / /
Surface science for improved ion traps D.A. Hite, Y. Colombe, A.C. Wilson, D.T.C. Allcock, D. Leibfried, D.J. Wineland, and D.P. Pappas Trapped ions are sensitive to electric-field noise from trap-electrode surfaces. Thi