| Document Date: 2013-11-21 18:46:20
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Company Lg / Fujitsu Laboratories / / Facility National Institute of Information / Osaka University / / IndustryTerm metal / gate metal / optical communications networks / carrier control / actual device / lithography technology / overall device / Wireless Communications Department High Frequency Measurement / Wireless Communications Department Compound Semiconductor Devices / process technology / wet-etching technology / recess technology / ultrahigh-speed communications / aqueous solution / millimeter-wave equipment / ultra-high-speed wireless / tions equipment technology / / NaturalFeature As channel / / Organization National Institute of Information / Osaka University / / Person Satoshi Endo / Yoshimi Yamashita / Takumi Miyashita / Keiji Ikeda / Takahiro Kitada / Satoshi Hiyamizu / Takashi Mimura / Kazumi Kasai / Kohki Hikosaka / / / Position D. Researcher / Millimeter-Wave Devices Group / MATSUI Toshiaki Group Leader / Millimeter-Wave Devices Group / / PublishedMedium Japanese Journal of Applied Physics / / Technology semiconductor / broadband / 3.2 Asymmetric recess technology / Semiconductor Devices / Wireless Communications / Microwave / 101 tions equipment technology / Communications Technology / lithography / lithography technology / process technology / wet-etching technology / /
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3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency