Electron and heat transport in porphyrin-based singlemolecule transistors with electro-burnt graphene electrodes Hatef Sadeghi*, Sara Sangtarash and Colin J. Lambert* Full Research Paper Address: Quantum Technology Centr

Source URL: www.beilstein-journals.org

J. Sens. Sens. Syst., 4, 1–8, 2015 www.j-sens-sens-syst.netdoi:jsss © Author(sCC Attribution 3.0 License. Catalytic metal-gate field effect transistors based on SiC

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How To: Matching Devices: © 1993, Nelson Pass After you acquire the devices, you will need to test them. You might consider running lots of tests on these transistors, but only one is essential: measuring gate-source vo

Source URL: www.firstwatt.com

The Power JFET Amplifier – Zen Variations #8 By Nelson Pass Introduction Thanks to a nice person on the Pass Labs Forum ( www.diyaudio.com ), I became aware that high current power JFET transistors are again available.

Source URL: www.firstwatt.com

• Valve amplifiers
• Analog circuits
• Vacuum tubes
• Transistor
• Current source
• JFET
• Amplifier
• Cascode
• Triode
• Electronic engineering
• Electromagnetism
• Electrical engineering

news & views NANOELECTRONICS Transistors arrive at the atomic limit A single-atom transistor has been made by positioning a phosphorus atom between metallic electrodes, also made of phosphorus, on a silicon surface.

Source URL: engineering.purdue.edu

G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur and A.A. Balandin, Low-noise top-gate graphene transistorsLow-noise top-gate graphene transistors G. Liu1, W. Stillman2, S. Rumyantsev2,3, Q. Shao1,4, M. Shur

Source URL: arxiv.org

• Physics
• Materials science
• Graphene
• Transistor
• Multigate device
• Bilayer graphene
• Flicker noise
• Alexander A. Balandin
• Chemistry
• Emerging technologies
• Nanomaterials

Zen Variations #9 By Nelson Pass Introduction In ZV8 we dipped our toes into the waters of power JFET transistors using the new Lovoltech LU1014D in a simple circuit. The focus of the project was on the JFET itself, and

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PhD position: Multimodal sensing polymer transistors in cell based sensors Duration 36 months Job status PhD position, full time. The salary complies with French standards.

Source URL: www.labex.u-bordeaux.fr

F1.8 (H. Hahn) [F1.8:1] B. Nasr, D. Wang, Z. Zhao-Karger, R. Kruk, H. Hahn, and S. Dasgupta, Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors, J. Mater. Chem.

Source URL: www.cfn.kit.edu

University of Geneva TPA-Electronique Circuits with Transistors Contents

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