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Transistors
Results: 228

#	Item
51	Letter pubs.acs.org/NanoLett Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors Kuniharu Takei,†,‡,§,∇ Morten Madsen,†,‡,§,∇,◆ Hui Fang,†,‡,§ Rehan Kapadia Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2012-04-19 00:46:45
52	72 Technology focus: Nitride transistors High-temperature recess for normally-on gallium nitride transistors Researchers claim the highest output power density and power-added efficiency Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2016-02-26 03:30:55
53	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors Susanna Reggiani, Gaetano Barone, Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English - Date: 2013-02-12 08:39:11
54	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors Dmitri Osintsev, Oskar Baumgartner, Zlatan Stanojevic, Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English - Date: 2013-02-12 08:39:11
55	APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2011-09-08 10:47:33
56	Letter pubs.acs.org/NanoLett MoS2 P‑type Transistors and Diodes Enabled by High Work Function MoOx Contacts Steven Chuang,†,‡,§ Corsin Battaglia,†,‡,§ Angelica Azcatl,∥ Stephen McDonnell,∥ Jeong Seuk Kang Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2014-03-27 20:17:07
57	APPLIED PHYSICS LETTERS 101, Comparative study of solution-processed carbon nanotube network transistors Sung-Jin Choi, Chuan Wang, Cheuk Chi Lo, Patrick Bennett, Ali Javey, and Jeffrey Bokora) Department Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2012-09-17 16:56:12
58	Room Temperature Oxide Deposition Approach to Fully Transparent, All‐Oxide Thin‐Film Transistors Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2015-09-10 23:27:55
59	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa, Add to Reading List Source URL: in4.iue.tuwien.ac.at Language: English - Date: 2013-02-12 08:39:12
60	APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn Add to Reading List Source URL: nano.eecs.berkeley.edu Language: English - Date: 2013-04-19 20:11:41

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