Nobel Lecture by George E. Smith

First Page		Document Content
Date: 2010-09-16 09:38:33 Semiconductor devices Semiconductor device fabrication Charge-coupled device Image processing Depletion region Diode Semiconductor device Capacitor Transistor Physics Technology Electronics		Nobel Lecture by George E. Smith Add to Reading List Source URL: www.nobelprize.org Download Document from Source Website File Size: 3,40 MB Share Document on Facebook

	Compound Semiconductor Device Laboratory - CSD lab 高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體電性之改善 (利用SiN鈍化層) Development of InAlN/GaN HEMT for DocID: 1slG6 - View Document
	Real Time MPEG1 Audio Encoder and Decoder Implemented on a 16-bit Fixed Point DSP Seonjoo Kim, Yi Li, Heesu Kim, Hanmook Choi and Youngbum Jang DSP Team, Micro Device Business, Semiconductor Division, Samsung Electronics DocID: 1rWCN - View Document
	2013 a nn ua l rep o r t a nd 2014 prox y chairm an ’ s le t t er 2014 DocID: 1rsw9 - View Document
	Electronic Devices on Various Substrates: Fabrication of Releasable SingleCrystal SiliconMetal Oxide FieldEffect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater) DocID: 1rrrV - View Document
	Product Spotlight SOL9620 Series Heraeus’ Industry Leading Pastes for Standard to Ultra LDE Wafers Heraeus has developed groundbreaking technology to improve DocID: 1rqYm - View Document