doi:[removed]j.jcrysgro[removed]

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Date: 2013-11-22 13:48:24 Superlattice Quantum electronics Gallium arsenide Heterojunction Indium gallium arsenide Quantum well Light-emitting diode High electron mobility transistor Molecular beam epitaxy Chemistry Electronics Spintronics		doi:[removed]j.jcrysgro[removed] Add to Reading List Source URL: www.nrl.navy.mil Download Document from Source Website File Size: 608,05 KB Share Document on Facebook

	InAs Quantum Well Hall Element HQ-0111 Shipped in packet-tape reel(5,000pcs per reel) Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. DocID: 1uLWH - View Document
	InAs Quantum Well Hall Element HQ-8220 Shipped in packet-tape reel(5,000pcs per reel) Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. DocID: 1tY1A - View Document
	CORRECTIONS TO “ON QUANTUM UNIQUE ERGODICITY FOR Γ\H × H” ELON LINDENSTRAUSS We note that (∗∗) on page 920 of [1], as well as its derivation on page 921, has a sign error. In fact, and this will actually be use DocID: 1rBgn - View Document
	SURF-IFISC proposalsAutonomous Boolean Networks for Neuro-Inspired Information Processing Advisors: Miquel Cornelles Soriano and Ingo Fischer Digital systems are typically programmed to obtain a well-defined DocID: 1qRY2 - View Document
	Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well G.T. Liu, A. Stintz, H. Li, K.J. Malloy and L.F. Lester The lowest room-temperature threshold current d DocID: 1qC9E - View Document