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MOSFET / Electronic design / Field-effect transistor / Indium gallium arsenide / Multigate device / Transistor / International Electron Devices Meeting / Transconductance / Nanowire / Chemistry / Electronic engineering / Electrical engineering
Date: 2014-03-31 17:35:38
MOSFET
Electronic design
Field-effect transistor
Indium gallium arsenide
Multigate device
Transistor
International Electron Devices Meeting
Transconductance
Nanowire
Chemistry
Electronic engineering
Electrical engineering

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