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Date: 2006-06-09 07:22:03 Threshold voltage Doping Electromagnetism Drain Induced Barrier Lowering Halo: Combat Evolved Transistor model Electrical engineering Games Reverse short-channel effect		Add to Reading List Source URL: www.nsti.org Download Document from Source Website File Size: 2,36 MB Share Document on Facebook

	Electronic phase transitions and space charge doping in 2D materials Abhay Shukla Institut de Minéralogie, de Physique des Matériaux et de Cosmoschimie CNRS UMR 7590, Université Pierre et Marie Curie, Paris 6 DocID: 1voRA - View Document
	In-situ Gallium-doping for forming p+ Germanium-Tin and application in Germanium-Tin PIN photodetector Wei Wang,1 Saumitra Vajandar,2 Sin Leng Lim,2 Yuan Dong,1 Vijay Richard D’Costa,1 Thomas Osipowicz,2 Eng Soon Tok,2 DocID: 1vnU6 - View Document
	THE WORLD ANTI-DOPING CODE INTERNATIONAL STANDARD PROHIBITED LIST DocID: 1vijk - View Document
	有機半導体関連セミナー講師：Prof. Antoine Kahn (Princeton University, USA) 題目：Impact of Doping-Induced Trap Filling on Charge Carrier Mobilityand Device Performance 日時：2013 年 1 月 23 日（ DocID: 1vbuQ - View Document
	Will field effect experiments permit to circumvent the drawbacks of chemical doping in correlated electron systems? A. Dooglav I. Mukhamedshin J. Bobroff DocID: 1v5Ul - View Document