Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou - Sungkyunkwan University - Document - PDFSEARCH.IO

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	Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou Add to Reading List Document Date: 2015-12-28 20:11:39 Open Document File Size: 21,70 KB Share Result on Facebook

Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, SouAdd to Reading List