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Science / Astrophysics / Plasma / Cathodic arc deposition / Sputter deposition / Ion / Electric current / Thin film / Madison Symmetric Torus / Chemistry / Physics / Thin film deposition


The measurement of sticking probability of some matal atoms on Si surface in pulsed arc plasma
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Document Date: 2014-12-11 20:16:57

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City

New York / Oxford / /

Company

Canon / Lawrence Berkeley National Laboratory / Clarendon Press / Stephens / /

Country

United States / United Kingdom / /

/

Facility

Lawrence Berkeley National Laboratory / University of California / /

IndustryTerm

metal / desorbed gas molecules / desorbed gas neutrals / metal neutrals / energy distributions / space resolving imaging techniques / pulse forming network / gas atom / plasma immersion processing / desorbed gas / detector chip / potential energy difference / chip processing / energy defect / non-metal neutral lines / metal plasma / Metal atoms / metal ions / semiconductor processors / metal plasma impact / ion energy / energy ranges / /

MusicGroup

CH / /

Organization

University of California / US Department of Energy / US Federal Reserve / United States Government / /

Person

André Anders / Al III / Pavel A. Ni / Al II / /

Position

Author / representative / /

ProvinceOrState

New Jersey / California / /

PublishedMedium

Journal of Physics D / /

Technology

radiation / laser / MEMS / semiconductor processors / Condensation / CMOS detector chip / spectroscopy / three-dimensional chip / /

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