Toggle navigation
PDFSEARCH.IO
Document Search Engine - browse more than 18 million documents
Sign up
Sign in
<--- Back to Details
First Page
Document Content
Date: 2002-01-11 03:01:11
Kyoto University
Kyoto
Silicon carbide
Chemistry
Manufacturing
Kansai Big Six
Scientific Program Call For Papers Key Dates
Add to Reading List
Source URL: www.iae.kyoto-u.ac.jp
Download Document from Source Website
File Size: 109,97 KB
Share Document on Facebook
Similar Documents
New Discoveries About SiC Mobility: Transistors made from silicon carbide (SiC) can operate at higher temperatures and/or voltages than silicon devices, making them a good fit for power-management applications. However,
DocID: 1usKM - View Document
US006869814B2United States Patent (10) Patent N0.: (45) Date of Patent:
DocID: 1rr93 - View Document
Technical Data Sheet Product 2701 Loctite UK Limited, Watchmead, Welwyn Garden City, Herts, AL7 1JB Technical Services Tel: (
DocID: 1re5T - View Document
MATEC Web of Conferences 30, DOI: m atec conf 13 C Owned by the authors, published by EDP Sciences, 2015 Thermal and Mechanical Properties of Poly(butylene succinate) Films
DocID: 1qZB8 - View Document
PUBLICATIONS Geochemistry, Geophysics, Geosystems RESEARCH ARTICLE2013GC005138 Key Points: In the mantle, C isotope fractionation
DocID: 1qKI7 - View Document