Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices - Semiconductor growth - Document - PDFSEARCH.IO

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Date: 2006-06-15 12:02:18		Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices Add to Reading List Source URL: positron.physik.uni-halle.de Download Document from Source Website File Size: 154,67 KB Share Document on Facebook