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Work function / Schottky barrier / Ohmic contact / Dipole / Physics / Chemistry / Materials science


Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Controlling band alignments by engineering interface dipoles at oxide heterointerfaces
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Document Date: 2012-01-30 04:32:45

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City

Tokyo / /

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Japan / United States / /

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Facility

University of Tokyo / Stanford University / /

IndustryTerm

metal work function / electronic devices / correlated devices / metal/semiconductor interface / conventional metal/semiconductor interfaces / energy / /

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Surface / Interface / Chemistry / /

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Department of Advanced Materials Science / University of Tokyo / Japan Science and Technology Agency / Department of Applied Physics / Department of Applied Chemistry / Stanford University / /

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California / /

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Stanford University / /

Technology

semiconductor / X-ray / /

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