3 Surfaces and Interfaces 3-1 Structure and Initial Oxidation of the SiCSurface The oxidation of semiconductors is an important topic in the context of the fabrication of electronic devices, as well as of strong i - Schottky barrier - Document - PDFSEARCH.IO

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	3 Surfaces and Interfaces 3-1 Structure and Initial Oxidation of the SiCSurface The oxidation of semiconductors is an important topic in the context of the fabrication of electronic devices, as well as of strong i Add to Reading List Document Date: 2010-01-05 10:34:21 Open Document File Size: 576,06 KB Share Result on Facebook Company 3DENSO CORP. / Patterson / / Currency pence / / IndustryTerm transition metal oxides / transition-metal oxides / electronic devices / potential applications / photon energy / energy resolution / power devices / e- ( / spintronic devices / energy shifts / / OperatingSystem Fermi / / Organization 1Nagoya Univ. / Univ. of Tokyo / 5Columbia Univ. / 4Tohoku Univ. / / Person M. Hashimoto / / Technology spectroscopy / radiation / laser / semiconductors / X-ray / using in situ photoemission spectroscopy / / SocialTag Condensed matter physics Emission spectroscopy Work function Photoemission spectroscopy Silicon carbide Heterojunction Schottky barrier Crystal Spintronics Chemistry

3 Surfaces and Interfaces 3-1 Structure and Initial Oxidation of the SiCSurface The oxidation of semiconductors is an important topic in the context of the fabrication of electronic devices, as well as of strong iAdd to Reading List