Back to Results
First PageMeta Content
Electronic engineering / Transistors / High-k dielectric / Gate dielectric / Thermal oxidation / Semiconductor device fabrication / Silicon dioxide / Polycrystalline silicon / Negative bias temperature instability / Chemistry / Electromagnetism / Electronics


Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059 Residual Order in the Interfacial SiO2 Layer
Add to Reading List

Document Date: 2010-01-05 10:32:23

Open Document

File Size: 59,60 KB

Share Result on Facebook
UPDATE