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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Emprirical Pseudopotential Calculations of Two-dimensional Electronic States in 4H-SiC Inversion layers Ryuta Watanabe1 and Yoshinari Kamakura1,2
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Document Date: 2013-02-12 08:39:08
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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Emprirical Pseudopotential Calculations of Two-dimensional Electronic States in 4H-SiC Inversion layers Ryuta Watanabe1 and Yoshinari Kamakura1,2