21 January[removed]Volume 102 Number 3 Applied Physics Letters

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Date: 2013-02-07 19:44:45 Semiconductor devices Compound semiconductors Inorganic compounds Multijunction photovoltaic cell Indium gallium arsenide Gallium arsenide Band gap Heterojunction Indium gallium phosphide Chemistry Solar cells Energy conversion		21 January[removed]Volume 102 Number 3 Applied Physics Letters Add to Reading List Source URL: daedalus.caltech.edu Download Document from Source Website File Size: 2,91 MB Share Document on Facebook

	Ultrafast electronic band gap control in an excitonic insulator Selene Mor Fritz Haber Institut of the MPG, Berlin, Germany DocID: 1uG9r - View Document
	Manipulating full photonic band gap in two dimensional birefringent photonic crystals Remo Proietti Zaccaria1,2 , Prabhat Verma2,3 , Satoshi Kawaguchi2 , Satoru Shoji2 and Satoshi Kawata2 1 State DocID: 1uaBD - View Document
$Optics / Optical devices / Physics / Diffraction / Photoresistor / Sensors / Electromagnetism / Spectroscopy / Diffraction grating$	Experimental Problem Determination of energy band gap of semiconductor thin films I. Introduction Semiconductors can be roughly characterized as materials whose electronic properties fall somewhere between those of condu DocID: 1qWVZ - View Document
	Low band gap (X-DADAD)n type copolymers for stable and efficient bulk heterojunction organic solar cells Alexander V. Akkuratov, Iliya E. Kuznetsov, Irina V. Klimovich, Diana K. Susarova, Fedor A. Prudnov, Olga A. Mukhac DocID: 1qRrF - View Document
	CHARGE TRAPPING EFFECTS IN THIN FILMS OF Al 2 o 3 AND Si0 2 Eliyahou Harari A DISSERTATION DocID: 1qott - View Document