Transcript of LED Technology Webinar

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Date: 2013-12-23 17:03:01 Semiconductor devices Light-emitting diodes Post-transition metals Gallium Indium gallium nitride Indium gallium arsenide Indium Metalorganic vapour phase epitaxy Band gap Chemistry Phosphides Compound semiconductors		Transcript of LED Technology Webinar Add to Reading List Source URL: www.nrel.gov Download Document from Source Website File Size: 157,04 KB Share Document on Facebook

	Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu DocID: 1shg7 - View Document
	Paper Title (use style: paper title) DocID: 1qzVz - View Document
	Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch DocID: 1prZf - View Document
	80 Technology focus: LEDs Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers. DocID: 1kCrF - View Document
	82 Technology focus: Nitride materials Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects. DocID: 1kBFw - View Document