Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si B. Stegemann, T. Lussky, B. Gorka, A. Schoepke, M. Schmidt Inst. of Silicon Photovoltaics, Helmholtz Center Berli - Passivation - Document - PDFSEARCH.IO

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	Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si B. Stegemann, T. Lussky, B. Gorka, A. Schoepke, M. Schmidt Inst. of Silicon Photovoltaics, Helmholtz Center Berli Add to Reading List Document Date: 2009-02-22 05:30:23 Open Document File Size: 56,66 KB Share Result on Facebook City Energy / Valencia / Si / / Company Thin Solid Films / / Country Germany / / Currency pence / / / Facility Helmholtz Center / / IndustryTerm charge carrier mobilities / energy axis / in situ processing cycle / chemical shift / energy / / OperatingSystem Fermi / / Organization Helmholtz Center Berlin / / / Technology spectroscopy / x-ray / recombination / / SocialTag Superhard materials Surface chemistry Abrasives Plasma Silicon dioxide Amorphous silicon X-ray photoelectron spectroscopy Ultra-high vacuum Solar cell Chemistry

Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si B. Stegemann, T. Lussky, B. Gorka, A. Schoepke, M. Schmidt Inst. of Silicon Photovoltaics, Helmholtz Center BerliAdd to Reading List