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Silicon-germanium / MOSFET / Thermal oxidation / Transistor / Lattice constant / Silicon dioxide / Chemistry / Silicon / Matter


Photon Factory Activity Report 2009 #27 Part BSurface and Interface 4C/2008G017 Residual order in thermal oxide of fully strained SiGe alloy on Si
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Document Date: 2010-12-27 22:22:07

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