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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode Gesualdo Donnarummaa,b, Vassil Palankovskia,b
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Document Date: 2013-02-12 08:39:03
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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode Gesualdo Donnarummaa,b, Vassil Palankovskia,b