ISSCCSESSION 30 EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination - Offset - Document - PDFSEARCH.IO

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	ISSCCSESSION 30 / EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination Add to Reading List Document Date: 2018-05-16 15:46:39 Open Document File Size: 1,08 MB Share Result on Facebook

ISSCCSESSION 30 / EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-TerminationAdd to Reading List