IBM / Kubota / F. Albert L. C. / Sony / Hitachi / Toshiba / STTMRAM / M. D. Tsunekawa D. D. / TMR / Grandis Inc. / Buhrmann / /
Country
Germany / France / United States / /
Currency
Rial / /
Facility
Cadillac Court / /
IndustryTerm
consumer electronics / metallic spin valve systems / anisotropy energy / perpendicular anisotropy technology / All-metal based nanoscale spin valves / nm technology nodes / nm technology node / circuit technologies / mainstream memory technology / electronic device applications / electronic products / nonmagnetic metal layers / metal layers / automotive applications / reduced manufacturing cost / demo chips / handset applications / nano-magnetic device / ultimate solution / technology nodes / potential applications / area product / torque writing technology / process technology / circuit technology / demo chip / thermal energy barrier / density memory applications / memory applications / activation energy / metal capping layer / /
Organization
U.S. Securities and Exchange Commission / Tohuku University / Cadillac Court / /
Person
Alex A. D. Smith / Yuzo Ohno / Young Min Lee / M. A. Darwish / Zhitao Diao / Hideo Ohno / Sumio Ikegawa / Peter Grünberg / Alexander DriskillSmith / Masatoshi Yoshikawa / Fumihiro Matsukura / Eugene Chen / Toshihiko Nagase / Masahiko Nakayama / Shinji Yuasa Mater / Stuart Parkin / Simon C. Li / Minoru Amano / W. P. Pratt / Jr. / Yiming Huai / Alex Panchula / Yunfei Ding / R. Fonck / Frank Albert / Shoji Ikeda / Xiaochun Zhu / Hideyasu Nagai / Albert Fert / K. Eid / Dmytro Apalkov / Mahendra Pakala / Takahiro Hanyu / Ming Lee / Lien-Chang Wang / Bill Almon / Naoharu Shimomura / Tatsuya Kishi / Katsuya Nishiyama / Eiji Kitagawa / J. Bass / Tadashi Kai / Hiroaki Yoda / Jordan Katine / Jun Hayakawa / Jian-Gang Zhu / /
Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects Spin-Transfer Torque MRAM (STT-MRAM):