NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from - NRF1 - Document - PDFSEARCH.IO

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	NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from Add to Reading List Document Date: 2014-04-22 08:58:19 Open Document File Size: 676,03 KB Share Result on Facebook

NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation fromAdd to Reading List