NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz - NRF1 - Document - PDFSEARCH.IO

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	NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz Add to Reading List Document Date: 2014-04-11 09:32:48 Open Document File Size: 1,20 MB Share Result on Facebook

NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHzAdd to Reading List