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NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other
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Document Date: 2014-04-11 09:17:13
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NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other