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Resistor / Output impedance


NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz
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Document Date: 2014-04-11 09:34:31

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City

Durham / /

Company

Nitronex LLC / Important Notice Nitronex LLC / Should Buyer / Case / NPT1012 Nitronex LLC / /

Country

United States / /

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Event

Product Issues / Patent Issuance / FDA Phase / /

IndustryTerm

semiconductor products / life support systems / /

Person

Pull Figure / Table / /

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Position

reasonable attorney / /

Product

NPT1012 / Substances / /

ProgrammingLanguage

DC / C / /

ProvinceOrState

North Carolina / /

Technology

semiconductor / GaN-on-Silicon technology / broadband / /

URL

http /

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